Design of high-performance electronic power converters based on GaN-on-Si semiconductors devices

In recent times, automotive world has been witnessing a paradigm change: hybrid, plug-in hybrid and battery electric vehicles (HEVs, PHEVs, BEVs) are progressively replacing the internal combustion engine vehicles (ICEVs) in circulation. A strong motivation derives from the carbon dioxide (CO2) emission performance standards that have been set by several legislative institutions aiming to tackle climate change challenges, as in the case of Regulation EU 2019/631 of the European Parliament. In this context, power electronics is assuming a pivotal role in automotive industry. In fact, an increase of just few percentage points in terms of efficiency or power density can make a huge difference for the driving range, since they have a direct influence on size, weight, charging time and cost of the EV major components (batteries, electric motors, and power electronic converters). Considering also the concerns related to the low profit margins, the development of top-performing and cost-effective power converters (AC/DC, DC/DC, DC/AC) is of crucial importance for automotive players. In the last decades, the Wide Band Gap (WBG) technology, based on Gallium Nitride and Silicon Carbide semiconductors, has had a disruptive impact on power electronics, paving the way for a new generation of power components, targeting not only the automotive market but also other applications such as home appliances, mobile charges, datacenters, railways, robotics and industrial motor drives. The objective of this thesis is to explain the design approach that has been followed to pursue the development of a top notch GaN-based Bi-directional OBC (On-Board Charger) prototype for automotive application, also emphasizing the challenges posed by the adoption of such technology. The final product, after being fully tested and certified, will enter mass production exhibiting state-of-the-art performance.