Characterization and modeling of low-frequency noise in MOSFETs

Zanolla, Nicola (2009) Characterization and modeling of low-frequency noise in MOSFETs, [Dissertation thesis], Alma Mater Studiorum Università di Bologna. Dottorato di ricerca in Tecnologie dell'informazione, 21 Ciclo. DOI 10.6092/unibo/amsdottorato/1333.
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For many years, RF and analog integrated circuits have been mainly developed using bipolar and compound semiconductor technologies due to their better performance. In the last years, the advance made in CMOS technology allowed analog and RF circuits to be built with such a technology, but the use of CMOS technology in RF application instead of bipolar technology has brought more issues in terms of noise. The noise cannot be completely eliminated and will therefore ultimately limit the accuracy of measurements and set a lower limit on how small signals can be detected and processed in an electronic circuit. One kind of noise which affects MOS transistors much more than bipolar ones is the low-frequency noise. In MOSFETs, low-frequency noise is mainly of two kinds: flicker or 1/f noise and random telegraph signal noise (RTS). The objective of this thesis is to characterize and to model the low-frequency noise by studying RTS and flicker noise under both constant and switched bias conditions. The effect of different biasing schemes on both RTS and flicker noise in time and frequency domain has been investigated.

Tipologia del documento
Tesi di dottorato
Zanolla, Nicola
Dottorato di ricerca
Scuola di dottorato
Scienze e ingegneria dell'informazione
Settore disciplinare
Settore concorsuale
Parole chiave
MOSFET, RTS noise, flicker noise, switched bias
Data di discussione
9 Aprile 2009

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